3. details go to www.twtysemi.com DMG6602SVT advance information product summary device v (br)dss r ds(on) i d t a = 25c q1 30v 60m @ v gs = 10v 3.4a 100m @ v gs = 4.5v 2.7a q2 -30v 95m @ v gs = -10v -2.8a 140m @ v gs = -4.5v -2.3a description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? backlighting ? dc-dc converters ? power management functions features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead-free finish; rohs compliant (note 1) ? halogen and antimony free. ?green? device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: tsot26 ? case material: molded plastic, ?g reen? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals connections: see diagram ? terminals: finish ? matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.013 grams (approximate) ordering information (note 3) part number case packaging DMG6602SVT-7 tsot26 3000 / tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. halogen and antimony free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm to tal br + cl) and <1000ppm antimony compounds. marking information date code key year 2010 2011 2012 2013 2014 2015 2016 2017 code x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d tsot26 top view top view 1 2 3 6 5 4 d1 s1 d2 g1 s2 g2 n-channel p-channel d1 s1 g1 q1 d2 s2 g2 q2 66c = product type marking code ym = date code marking y = year (ex: x = 2010) m = month (ex: 9 = september) 66c ym smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
advance information maximum ratings ? q1 @ta = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = 10v steady state t a = 25c t a = 70c i d 3.4 2.7 a continuous drain current (note 5) v gs = 4.5v steady state t a = 25c t a = 70c i d 2.7 2.2 a maximum continuous body diode forward current (note 5) i s 1.5 a pulsed drain current (note 5) i dm 25 a maximum ratings ? q2 @ta = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = -10v steady state t a = 25c t a = 70c i d -2.8 -2.4 a continuous drain current (note 5) v gs = -4.5v steady state t a = 25c t a = 70c i d -2.3 -2.1 a maximum continuous body diode forward current (note 5) i s -1.5 a pulsed drain current (note 5) i d -20 a thermal characteristics characteristic symbol value units total power dissipation (note 4) t a = 25c p d 0.84 w t a = 70c 0.52 thermal resistance, junction to ambient (note 4) steady state r ja 155 c/w t<10s 109 total power dissipation (note 5) t a = 25c p d 1.27 w t a = 70c 0.8 thermal resistance, junction to ambient (note 5) steady state r ja 102 c/w t<10s 71 thermal resistance, junction to case (note 5) r jc 34 operating and storage temperature range t j, t stg -55 to +150 c notes: 4. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 5. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper plate. DMG6602SVT smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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